SCS210AMC
DIODE SIL CARB 650V 10A TO220FMManufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor SCS210AMC is a Silicon Carbide (SiC) Schottky diode designed for high-performance power applications. This component features a 650 V reverse voltage rating and a 10 A average rectified current capability. The SCS210AMC exhibits a low forward voltage drop of 1.55 V at 10 A, contributing to reduced power dissipation. Its advanced SiC technology provides zero reverse recovery time, enabling faster switching speeds and improved efficiency in power supply units, inverters, and electric vehicle charging systems. The device operates at a maximum junction temperature of 175°C and is housed in a TO-220FM package for through-hole mounting. Key electrical characteristics include a reverse leakage current of 200 µA at 600 V and an output capacitance of 365 pF at 1 V and 1 MHz.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 365pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220FM |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 10 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 600 V |
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