SCS210AGC
DIODE SIL CARB 650V 10A TO220ACManufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor SCS210AGC is a Silicon Carbide (SiC) Schottky diode featuring a 650V reverse voltage rating and 10A average rectified current capability. This through-hole component, packaged in a TO-220AC, offers a maximum forward voltage (Vf) of 1.55V at 10A. It exhibits a low reverse leakage current of 200 µA at 600V and a capacitance of 365pF at 1V. The SCS210AGC is distinguished by its zero reverse recovery time, contributing to enhanced switching performance. The maximum junction operating temperature is 175°C. This SiC diode is suitable for applications in power factor correction, switch-mode power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 365pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 10 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 600 V |
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