SCS208AGHRC
DIODE SIL CARB 650V 8A TO220ACManufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor presents the SCS208AGHRC, a 650V Silicon Carbide (SiC) Schottky diode. This component features an average rectified current capability of 8A and a forward voltage drop of 1.55V at 8A. Designed for demanding applications, it operates with a maximum junction temperature of 175°C and offers a reverse leakage current of 160 µA at 600V. The SCS208AGHRC exhibits no recovery time above 500mA (Io), indicative of its advanced SiC Schottky technology. Packaged in a TO-220AC for through-hole mounting, this device is qualified to AEC-Q101, making it suitable for automotive applications. Its capacitance at 1V and 1MHz is 291pF.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 291pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 8 A |
| Current - Reverse Leakage @ Vr | 160 µA @ 600 V |
| Qualification | AEC-Q101 |
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