SCS110KGC
DIODE SIL CARB 1.2KV 10A TO220ACManufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor SCS110KGC is a 1200V, 10A Silicon Carbide Schottky diode. This through-hole component, housed in a TO-220AC package, offers a maximum forward voltage (Vf) of 1.75V at 10A. Engineered with SiC technology, it exhibits a reverse leakage current of 200 µA at its maximum reverse voltage of 1200V. The SCS110KGC features a junction operating temperature of up to 175°C (Max) and a capacitance of 650pF at 1V and 1MHz. Its fast switching characteristics are indicated by a reverse recovery time (trr) of 0 ns, with no recovery time exceeding 500mA (Io). This device finds application in power supply units, electric vehicle charging systems, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 650pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 10 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
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