SCS110AGC
DIODE SIL CARB 600V 10A TO220ACManufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor SCS110AGC is a Silicon Carbide (SiC) Schottky diode designed for high-performance power applications. This through-hole component, packaged in a TO-220AC, features a maximum DC reverse voltage of 600V and a forward voltage (Vf) of 1.7V at 10A. The SCS110AGC offers a significant advantage with its zero reverse recovery time (trr), enabling faster switching speeds and reduced switching losses compared to traditional silicon diodes. Its high operating junction temperature of 175°C (Max) ensures reliability in demanding environments. The diode exhibits a low reverse leakage current of 200 µA at 600V and a capacitance of 430pF at 1V. This SiC Schottky diode is suitable for use in power factor correction, AC-DC converters, and DC-DC converters across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 430pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 600 V |
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