SCS105KGC
DIODE SIL CARB 1.2KV 5A TO220ACManufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor SCS105KGC is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This component offers a maximum DC reverse voltage (Vr) of 1200 V and an average rectified forward current (Io) of 5 A. Featuring a forward voltage (Vf) of 1.75 V at 5 A, the SCS105KGC exhibits a low leakage current of 100 µA at its maximum reverse voltage. Its SiC technology enables a fast switching speed with no discernible reverse recovery time for currents above 500mA. The diode is packaged in a TO-220-2 (TO-220AC) through-hole mount configuration, with a maximum junction operating temperature of 175°C. This device is suitable for use in power factor correction, AC-DC converters, and DC-DC converters across industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 325pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 5 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |