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RFS30TZ6SGC13

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RFS30TZ6SGC13

DIODE GEN PURP 650V 30A TO247GE

Manufacturer: Rohm Semiconductor

Categories: Single Diodes

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The Rohm Semiconductor RFS30TZ6SGC13 is a general-purpose diode designed for high-voltage, high-current applications. This component features a 650V reverse voltage rating and a 30A average rectified current capability. With a forward voltage drop of 2.3V at 30A and a reverse leakage current of 5 µA at 650V, it offers efficient power handling. The diode's fast recovery time of 35 ns contributes to its suitability for demanding switching applications. Operating at junction temperatures up to 175°C, it is housed in a TO-247-2 package for through-hole mounting. This component is commonly utilized in power supply units, inverters, and motor drives across various industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-2
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35 ns
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)30A
Supplier Device PackageTO-247GE
Operating Temperature - Junction175°C
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If2.3 V @ 30 A
Current - Reverse Leakage @ Vr5 µA @ 650 V

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