RFN3BM2STL
DIODE GEN PURP 200V 3A TO252Manufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor RFN3BM2STL is a general-purpose diode designed for efficient power rectification. This component features a 200V reverse voltage rating and a 3A average rectified current capability. The forward voltage drop is a maximum of 980mV at 3A. With a fast recovery time of 25ns, it is suitable for applications requiring rapid switching performance. The reverse leakage current is a low 10µA at 200V. Manufactured with standard technology, this diode is housed in a TO-252-3, DPAK surface-mount package, facilitating automated assembly. It operates within a junction temperature range of -40°C to 150°C. This component is commonly utilized in power supply circuits, motor control, and automotive applications. The RFN3BM2STM is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | TO-252 |
| Operating Temperature - Junction | 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 980 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
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