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RFN30TS6SGC11

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RFN30TS6SGC11

DIODE GEN PURP 600V 30A TO247

Manufacturer: Rohm Semiconductor

Categories: Single Diodes

Quality Control: Learn More

Rohm Semiconductor’s RFN30TS6SGC11 is a general-purpose diode with a maximum repetitive reverse voltage of 600 V and a continuous average forward current rating of 30 A. This through-hole component, packaged in a TO-247-3 case, features a fast recovery time of 60 ns, classifying it as a fast recovery diode. The forward voltage drop is a maximum of 1.55 V at 30 A, and the reverse leakage current is 10 µA at 600 V. With a maximum operating junction temperature of 150°C, this diode is suitable for applications in power supply rectification, motor control, and industrial power systems. The component is supplied in bulk packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-247-3
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)60 ns
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)30A
Supplier Device PackageTO-247
Operating Temperature - Junction150°C (Max)
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.55 V @ 30 A
Current - Reverse Leakage @ Vr10 µA @ 600 V

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