RFN2L6STE25
DIODE GEN PURP 600V 1.5A PMDSManufacturer: Rohm Semiconductor
Categories: Single Diodes
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The Rohm Semiconductor RFN2L6STE25 is a general-purpose diode designed for demanding applications. This fast-recovery diode features a maximum reverse voltage of 600 V and an average rectified forward current of 1.5 A. It exhibits a low reverse leakage current of 1 µA at 600 V and a forward voltage drop of 1.55 V at 1.5 A. The device boasts a reverse recovery time of 35 ns, enabling efficient switching. Manufactured with standard technology and packaged in a DO-214AC (SMA) surface mount configuration, the RFN2L6STE25 is supplied on tape and reel. Its robust construction and performance characteristics make it suitable for use in power supplies, inverters, and automotive electronics. The operating junction temperature is rated up to 150°C (Max).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1.5A |
| Supplier Device Package | PMDS |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 1.5 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 600 V |
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