RFN1L6STE25
DIODE GEN PURP 600V 800MA PMDSManufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor RFN1L6STE25 is a General Purpose Diode with a maximum reverse voltage of 600 V and an average rectified current of 800 mA. This surface mount component, housed in a DO-214AC (SMA) package, features a fast recovery time of 35 ns. The forward voltage drop is specified at 1.45 V at 800 mA, with a low reverse leakage current of 1 µA at 600 V. Operating at a maximum junction temperature of 150°C, this diode is suitable for applications in power supplies, lighting, and industrial control systems. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 800mA |
| Supplier Device Package | PMDS |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 800 mA |
| Current - Reverse Leakage @ Vr | 1 µA @ 600 V |
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