RF1005TF6S
DIODE GEN PURP 600V 10A TO220NFMManufacturer: Rohm Semiconductor
Categories: Single Diodes
Quality Control: Learn More
The Rohm Semiconductor RF1005TF6S is a general-purpose diode designed for applications requiring robust performance. Featuring a 600 V reverse voltage rating and a 10 A average rectified current capability, this component is suitable for demanding power management tasks. Its fast recovery time of 40 ns, coupled with a forward voltage drop of 1.7 V at 10 A, ensures efficient operation. The diode's junction temperature can reach a maximum of 150°C, and it exhibits a low reverse leakage current of 10 µA at its maximum reverse voltage. Packaged in a TO-220NFM (TO-220-2 Full Pack) for through-hole mounting, the RF1005TF6S finds application in industries such as industrial power supplies, automotive electronics, and consumer appliances.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 40 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220NFM |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
Request a Quote
Clients Also Buy
RB160MM-30TFTR
DIODE SCHOTTKY 30V 1A PMDU
RBR5LAM30BTR
DIODE SCHOTTKY 30V 5A PMDTM
RB058LB100TBR1
SUPER LOW IR, 100V 3A, SMBP, SCH
