RBLQ30NL10STL
TRENCH MOS STRUCTURE, 100V, 30A,Manufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor RBLQ30NL10STL is a 100V, 30A surface mount diode featuring a TRENCH MOS structure. This Schottky diode offers a forward voltage of 860mV at 30A and a reverse leakage of 150µA at 100V. The component operates with a junction temperature up to 150°C and is housed in a TO-263L (TO-263-3, D2PAK) package, supplied in tape and reel. Its fast recovery characteristics are suitable for applications requiring efficient power handling. This component is commonly utilized in power supply circuits, automotive electronics, and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 30A |
| Supplier Device Package | TO-263L |
| Operating Temperature - Junction | 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 860 mV @ 30 A |
| Current - Reverse Leakage @ Vr | 150 µA @ 100 V |
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