RBLQ30NL10SFHTL
TRENCH MOS STRUCTURE, 100V, 30A,Manufacturer: Rohm Semiconductor
Categories: Single Diodes
Quality Control: Learn More
Rohm Semiconductor RBLQ30NL10SFHTL is a Trench MOS structure diode with a 100V reverse voltage rating and 30A average rectified current. This surface mount component, packaged in a TO-263L (TO-263-3, D2PAK) configuration, exhibits a maximum forward voltage of 860mV at 30A and a reverse leakage of 150µA at 100V. Qualified to AEC-Q101 for automotive applications, it operates at junction temperatures up to 150°C. The device features fast recovery characteristics, typically less than 500ns for currents exceeding 200mA. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 30A |
| Supplier Device Package | TO-263L |
| Operating Temperature - Junction | 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 860 mV @ 30 A |
| Current - Reverse Leakage @ Vr | 150 µA @ 100 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
RBQ3RSM10BTL1
DIODE SCHOTTKY 100V 3A TO277A
RFV8TJ6SGC9
DIODE GEN PURP 600V 8A TO220ACFP
RBQ3RSM65BTFTL1
DIODE SCHOTTKY 65V 3A TO277A
