RBLQ20NL10STL
TRENCH MOS STRUCTURE, 100V, 20A,Manufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor RBLQ20NL10STL is a Trench MOS structure diode with a 100V reverse voltage rating and a 20A average rectified current (Io). This surface mount component, packaged in a TO-263L (TO-263AB) case, features a fast recovery time of less than 500ns and a maximum forward voltage (Vf) of 860mV at 20A. The reverse leakage current is rated at 80 µA at 100V. Operating junction temperature is up to 150°C. This diode is suitable for applications in power supplies and automotive systems requiring efficient rectification and fast switching characteristics. The RBLQ20NL10STL is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-263L |
| Operating Temperature - Junction | 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 860 mV @ 20 A |
| Current - Reverse Leakage @ Vr | 80 µA @ 100 V |
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