RBLQ20NL10SFHTL
TRENCH MOS STRUCTURE, 100V, 20A,Manufacturer: Rohm Semiconductor
Categories: Single Diodes
Quality Control: Learn More
Rohm Semiconductor RBLQ20NL10SFHTL is a high-performance Schottky diode designed for demanding applications. This surface mount device, packaged in a TO-263L (TO-263-3, D2PAK) configuration, features a TRENCH MOS structure for enhanced efficiency. It offers a maximum DC reverse voltage of 100V and a substantial average rectified current handling capability of 20A. The forward voltage drop is rated at a maximum of 860mV at 20A. With a reverse leakage current of only 80 µA at 100V, it minimizes power loss. This automotive-grade component is qualified to AEC-Q101 standards and operates with a junction temperature up to 150°C. Its fast recovery characteristics make it suitable for power supply, automotive, and industrial applications requiring efficient rectification. The RBLQ20NL10SFHTL is supplied on a tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-263L |
| Operating Temperature - Junction | 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 860 mV @ 20 A |
| Current - Reverse Leakage @ Vr | 80 µA @ 100 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
RBQ3RSM10BTL1
DIODE SCHOTTKY 100V 3A TO277A
RFV8TJ6SGC9
DIODE GEN PURP 600V 8A TO220ACFP
RBQ3RSM65BTFTL1
DIODE SCHOTTKY 65V 3A TO277A
