RBLQ20BGE10TL
TRENCH MOS STRUCTURE, 100V, 20A,Manufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor RBLQ20BGE10TL is a 100V, 20A Schottky diode featuring a TRENCH MOS structure and designed for surface mounting. This component, packaged in a TO-252GE (DPAK) case, offers a maximum DC reverse voltage of 100V and a typical forward voltage of 860mV at 20A. The device exhibits a reverse leakage current of 80 µA at 100V. Its fast recovery characteristic, with a speed of less than 500ns for currents greater than 200mA, makes it suitable for various power switching applications. The operating junction temperature reaches up to 150°C. This diode finds application in power supplies, automotive electronics, and industrial control systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-252GE |
| Operating Temperature - Junction | 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 860 mV @ 20 A |
| Current - Reverse Leakage @ Vr | 80 µA @ 100 V |
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