RBLQ10RSM10TL1
TRENCH MOS STRUCTURE, 100V, 10A,Manufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor RBLQ10RSM10TL1 is a Schottky diode with a 100V reverse voltage rating and a 10A average rectified forward current. This component features a TRENCH MOS structure for enhanced performance. Its forward voltage drop is a maximum of 670mV at 10A, and it exhibits a reverse leakage current of 80µA at its maximum reverse voltage of 100V. The RBLQ10RSM10TL1 is designed for surface mounting within a TO-277A package. Operating at junction temperatures up to 150°C, this diode is suitable for applications requiring fast recovery times. It is commonly utilized in power supply circuits, voltage clamping, and reverse polarity protection within the automotive and industrial sectors. The component is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-277, 3-PowerDFN |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-277A |
| Operating Temperature - Junction | 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 670 mV @ 10 A |
| Current - Reverse Leakage @ Vr | 80 µA @ 100 V |
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