RBLQ10RSM10TFTL1
TRENCH MOS STRUCTURE, 100V, 10A,Manufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor RBLQ10RSM10TFTL1 is a 100V, 10A trench MOS structure diode in a TO-277A surface mount package. This automotive-grade component, qualified to AEC-Q101, features a fast recovery time and a low forward voltage of 670 mV at 10 A. The reverse leakage current is rated at 80 µA at 100 V. Its robust design and operational temperature up to 150°C junction make it suitable for demanding applications within the automotive industry. The component is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-277, 3-PowerDFN |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-277A |
| Operating Temperature - Junction | 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 670 mV @ 10 A |
| Current - Reverse Leakage @ Vr | 80 µA @ 100 V |
| Qualification | AEC-Q101 |
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