RB521ZS-308EPT2R
DIODE SCHOTTKY 30V 100MA GMD2Manufacturer: Rohm Semiconductor
Categories: Single Diodes
Quality Control: Learn More
Rohm Semiconductor RB521ZS-308EPT2R is a Schottky diode designed for high-speed rectification in demanding applications. This single diode features a maximum DC reverse voltage of 30V and an average rectified current capacity of 100mA. The forward voltage drop at 10mA is a low 370mV, characteristic of Schottky barrier technology, contributing to efficient power conversion. Reverse leakage current is minimal at 7 µA at 10V. Packaged in a compact GMD2 (0201 Metric) surface mount configuration, this component is supplied on a Tape & Reel (TR) for automated assembly. The RB521ZS-308EPT2R is suitable for use in consumer electronics, industrial control, and telecommunications equipment where efficient and fast switching is critical. Its operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 0201 (0603 Metric) |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 100mA |
| Supplier Device Package | GMD2 |
| Operating Temperature - Junction | 150°C |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 370 mV @ 10 mA |
| Current - Reverse Leakage @ Vr | 7 µA @ 10 V |
Request a Quote
Clients Also Buy
1SS244T-77
DIODE GEN PURP 220V 200MA MSD
RBQ3RSM10BTL1
DIODE SCHOTTKY 100V 3A TO277A
RFV8TJ6SGC9
DIODE GEN PURP 600V 8A TO220ACFP
