BAS16T116
DIODE GEN PURP 80V 100MA SSD3Manufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor BAS16T116, a general-purpose small signal diode, offers a reverse voltage rating of 80V and a forward current capability of 100mA. This component features a low leakage current of 100 nA at 70V and a fast reverse recovery time of 4 ns, making it suitable for high-speed switching applications. The forward voltage drop is a maximum of 1.2V at 100mA, with a junction capacitance of 3.5pF at 6V and 1MHz. Packaged in a compact TO-236-3, SC-59, SOT-23-3 (SSD3) format and supplied on tape and reel, the BAS16T116 is designed for surface mounting. Its operating junction temperature range extends to 150°C. This diode finds application in telecommunications, consumer electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 3.5pF @ 6V, 1MHz |
| Current - Average Rectified (Io) | 100mA |
| Supplier Device Package | SSD3 |
| Operating Temperature - Junction | 150°C |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 100 mA |
| Current - Reverse Leakage @ Vr | 100 nA @ 70 V |
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