US6X6TR
TRANS NPN 30V 1.5A TUMT6Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor, part number US6X6TR. This device offers a 30V collector-emitter breakdown voltage and a maximum collector current of 1.5A. It features a transition frequency of 300MHz and a power dissipation of 1W. The DC current gain (hFE) is a minimum of 270 at 100mA and 2V. Saturation voltage (Vce Sat) is specified at a maximum of 350mV for 50mA base current and 1A collector current. The transistor is housed in a TUMT6 package for surface mounting and is supplied on tape and reel. This component is suitable for applications in industrial equipment and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 100mA, 2V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TUMT6 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1 W |
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