US6X5TR
TRANS NPN 12V 2A TUMT6Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's US6X5TR is a general-purpose NPN bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 12V and a maximum continuous collector current of 2A. It exhibits a transition frequency of 360MHz and a maximum power dissipation of 1W. The DC current gain (hFE) is specified at a minimum of 270 at 200mA collector current and 2V collector-emitter voltage. Key parameters include a Vce(sat) of 180mV at 50mA base current and 1A collector current, and a collector cutoff current (ICBO) of 100nA. The device operates at junction temperatures up to 150°C and is supplied in a TUMT6 package, delivered on tape and reel. This transistor is commonly utilized in power management and signal switching circuits within the consumer electronics and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 180mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 200mA, 2V |
| Frequency - Transition | 360MHz |
| Supplier Device Package | TUMT6 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 1 W |
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