US6X4TR
TRANS NPN 30V 2A TUMT6Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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The Rohm Semiconductor US6X4TR is an NPN bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 30V and a maximum collector current of 2A. With a transition frequency of 280MHz and a power dissipation rating of 400mW, it is suitable for general-purpose amplification and switching in industrial automation, consumer electronics, and telecommunications equipment. The device offers a minimum DC current gain (hFE) of 270 at 200mA collector current and 2V collector-emitter voltage. Collector cutoff current is specified at a maximum of 100nA. The saturation voltage (Vce(sat)) is 370mV at 75mA base current and 1.5A collector current. Packaged in a TUMT6 for tape and reel deployment, it operates within an ambient temperature range of 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 370mV @ 75mA, 1.5A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 200mA, 2V |
| Frequency - Transition | 280MHz |
| Supplier Device Package | TUMT6 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 400 mW |
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