US6X3TR
TRANS NPN 12V 3A TUMT6Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor, part number US6X3TR. This surface mount device, housed in a TUMT6 package, offers a collector current capability of up to 3A and a collector-emitter breakdown voltage of 12V. Featuring a transition frequency of 360MHz and a maximum power dissipation of 400mW, it is suitable for applications requiring controlled switching and amplification. The transistor exhibits a minimum DC current gain (hFE) of 270 at 500mA and 2V, with a Vce(sat) of 250mV at 30mA and 1.5A. Operating temperature range extends to 150°C. Commonly found in consumer electronics and industrial control systems. Supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 30mA, 1.5A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 500mA, 2V |
| Frequency - Transition | 360MHz |
| Supplier Device Package | TUMT6 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 400 mW |
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