US6T7TR
TRANS PNP 30V 1.5A TUMT6Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor PNP Bipolar Junction Transistor, part number US6T7TR. This device offers a 30V collector-emitter breakdown voltage (Vce) with a maximum collector current (Ic) of 1.5A. It features a transition frequency of 280MHz and a power dissipation of 1W. The minimum DC current gain (hFE) is specified at 270 at 100mA collector current and 2V collector-emitter voltage. Collector cutoff current (Icbo) is a maximum of 100nA. Saturation voltage (Vce(sat)) is a maximum of 370mV at 50mA base current and 1A collector current. The transistor is housed in a TUMT6 package suitable for surface mounting, supplied on tape and reel. This component is widely utilized in the automotive and industrial electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 370mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 100mA, 2V |
| Frequency - Transition | 280MHz |
| Supplier Device Package | TUMT6 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1 W |
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