US6T6TR
TRANS PNP 30V 2A TUMT6Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor PNP Bipolar Junction Transistor, part number US6T6TR. This device features a 30V collector-emitter breakdown voltage and a continuous collector current capability of 2A. With a transition frequency of 360MHz and a maximum power dissipation of 1W, it is designed for efficient switching and amplification applications. The minimum DC current gain (hFE) is 270 at 200mA collector current and 2V collector-emitter voltage. Saturation voltage (Vce Sat) is specified at a maximum of 180mV for 50mA base current and 1A collector current. The collector cutoff current (ICBO) is a maximum of 100nA. This component is supplied in a TUMT6 package, suitable for surface mounting. It is commonly utilized in industrial automation, consumer electronics, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 180mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 200mA, 2V |
| Frequency - Transition | 360MHz |
| Supplier Device Package | TUMT6 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1 W |
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