US6T4TR
TRANS PNP 12V 3A TUMT6Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor PNP Bipolar Junction Transistor, part number US6T4TR. This device features a 12 V collector-emitter breakdown voltage (Vceo) and a maximum collector current (Ic) of 3 A. With a transition frequency (Ft) of 280 MHz and a maximum power dissipation of 1 W, it is suitable for applications requiring efficient switching and signal amplification. The transistor exhibits a minimum DC current gain (hFE) of 270 at 500 mA collector current and 2 V collector-emitter voltage. Saturation voltage (Vce(sat)) is a maximum of 250 mV at 30 mA base current and 1.5 A collector current. Designed for surface mounting in the compact TUMT6 package, it operates at junction temperatures up to 150°C. This component is commonly utilized in consumer electronics, industrial control systems, and automotive applications. Packaged in Tape & Reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 30mA, 1.5A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 500mA, 2V |
| Frequency - Transition | 280MHz |
| Supplier Device Package | TUMT6 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 1 W |
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