UML2NTR
TRANS NPN 50V 0.15A UMT5Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor, part number UML2NTR. This device features an NPN + isolated diode configuration, designed for surface mount applications within a UMT5 package. It offers a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 150mA. The transition frequency is 180MHz, with a maximum power dissipation of 150mW. Key specifications include a minimum DC current gain (hFE) of 120 at 1mA and 6V, and a Vce saturation of 400mV maximum at 5mA collector current and 50mA base current. The collector cutoff current is specified at 100nA (ICBO). This component operates up to a junction temperature of 150°C and is supplied on tape and reel. Applications include general-purpose switching and amplification in consumer electronics and industrial equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-TSSOP, SC-70-5, SOT-353 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN + Diode (Isolated) |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | UMT5 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
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