QSX6TR
TRANS NPN 30V 1.5A TSMT6Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor, part number QSX6TR. This component features a collector-emitter breakdown voltage of 30V and a continuous collector current capability of 1.5A. The transition frequency is specified at 300MHz. Designed for surface mounting, it utilizes the TSMT6 (SC-95) package, also known as SOT-23-6 Thin. The maximum power dissipation is 1.25W, with a minimum DC current gain (hFE) of 270 at 100mA and 2V. Collector cutoff current is a maximum of 100nA (ICBO). Operating temperature ranges up to 150°C. The QSX6TR is supplied in Tape & Reel packaging. This device finds application in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 100mA, 2V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TSMT6 (SC-95) |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1.25 W |
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