QSX5TR
TRANS NPN 12V 2A TSMT6Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's QSX5TR is an NPN bipolar junction transistor (BJT) designed for surface-mount applications. This component offers a collector-emitter breakdown voltage of 12V and a maximum collector current of 2A. With a transition frequency of 360MHz and a power dissipation capability of 1.25W, it is suitable for various signal amplification and switching tasks. Key specifications include a minimum DC current gain (hFE) of 270 at 200mA and 2V, and a Vce saturation of 180mV at 50mA and 1A. The device features a low collector cutoff current of 100nA (ICBO) and operates at an elevated junction temperature of up to 150°C. The QSX5TR is packaged in a TSMT6 (SC-95) SOT-23-6 Thin format, supplied on tape and reel (TR). This transistor is commonly utilized in portable electronics and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 180mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 200mA, 2V |
| Frequency - Transition | 360MHz |
| Supplier Device Package | TSMT6 (SC-95) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 1.25 W |
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