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QSX4TR

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QSX4TR

TRANS NPN 30V 2A TSMT6

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

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Rohm Semiconductor QSX4TR is an NPN bipolar junction transistor designed for surface-mount applications. This device features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 2A, with a power dissipation capability of 1.25W. The transition frequency is rated at 280MHz, and it exhibits a minimum DC current gain (hFE) of 270 at 200mA and 2V. Saturation voltage (Vce(sat)) is specified at a maximum of 370mV at 75mA base current and 1.5A collector current. The transistor operates within an ambient temperature range of -55°C to 150°C. Supplied in a TSMT6 (SC-95) package, it is delivered on tape and reel. This component is suitable for use in various industrial and consumer electronics applications requiring efficient switching and amplification.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic370mV @ 75mA, 1.5A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce270 @ 200mA, 2V
Frequency - Transition280MHz
Supplier Device PackageTSMT6 (SC-95)
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max1.25 W

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