QSX2TR
TRANS NPN 30V 5A TSMT6Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor, part number QSX2TR. This surface mount device, housed in a TSMT6 (SC-95) package, offers a collector-emitter breakdown voltage of 30V and a continuous collector current capability of 5A. Featuring a transition frequency of 200MHz and a maximum power dissipation of 500mW, it exhibits a minimum DC current gain (hFE) of 270 at 500mA and 2V. Saturation voltage (Vce(sat)) is a maximum of 250mV at 40mA and 2A. The collector cutoff current (ICBO) is specified at a maximum of 100nA. Operating temperature range extends to 150°C. Commonly utilized in power management, automotive electronics, and industrial automation applications. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 40mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 500mA, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TSMT6 (SC-95) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 500 mW |
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