QST5TR
TRANS PNP 30V 2A TSMT6Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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This Rohm Semiconductor QST5TR is a PNP bipolar junction transistor designed for surface mount applications in a TSMT6 (SC-95) package. It features a 30V collector-emitter breakdown voltage and a maximum collector current of 2A. With a power dissipation of 1.25W and a transition frequency of 280MHz, this device is suitable for general-purpose amplification and switching. Key specifications include a minimum DC current gain (hFE) of 270 at 200mA and 2V, and a maximum Vce saturation of 370mV at 75mA and 1.5A. The collector cutoff current (ICBO) is rated at a maximum of 100nA. Operating temperature range extends up to 150°C. This component is commonly utilized in automotive and industrial electronics. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 370mV @ 75mA, 1.5A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 200mA, 2V |
| Frequency - Transition | 280MHz |
| Supplier Device Package | TSMT6 (SC-95) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1.25 W |
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