QSL9TR
TRANS PNP 12V 1.5A TSMT5Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's QSL9TR is a PNP bipolar junction transistor with an integrated isolation diode, packaged in a TSMT5 (SOT-23-5 Thin) surface mount configuration. This component is designed for demanding applications, offering a collector-emitter breakdown voltage of 12V and a maximum collector current of 1.5A. It exhibits a minimum DC current gain (hFE) of 270 at 200mA and 2V, with a transition frequency of 400MHz. The transistor maintains a low Vce saturation of 200mV at 25mA and 500mA, and a collector cutoff current of 100nA (ICBO). With a maximum power dissipation of 500mW and an operating junction temperature of 150°C, the QSL9TR is suitable for use in industrial control, automotive electronics, and power management systems. The device is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-5 Thin, TSOT-23-5 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP + Diode (Isolated) |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 25mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 200mA, 2V |
| Frequency - Transition | 400MHz |
| Supplier Device Package | TSMT5 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 500 mW |
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