MMST8098T146
TRANS NPN 60V 0.2A SMT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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The Rohm Semiconductor MMST8098T146 is an NPN bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 200mA. With a transition frequency of 350MHz and a maximum power dissipation of 350mW, it is suitable for general-purpose amplification and switching in various electronic circuits. The device offers a minimum DC current gain (hFE) of 100 at 1mA collector current and 5V collector-emitter voltage. Packaged in an SMT3 (TO-236-3, SC-59, SOT-23-3) footprint and supplied on tape and reel, the MMST8098T146 is utilized in telecommunications and consumer electronics. The saturation voltage (Vce(sat)) is a maximum of 300mV at 10mA base current and 100mA collector current, with a collector cutoff current (Icbo) of 100nA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Frequency - Transition | 350MHz |
| Supplier Device Package | SMT3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 350 mW |
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