MMST4126T146
TRANS GP BJT PNP 25V 0.2A 3-PINManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor MMST4126T146 is a general-purpose NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a 25V collector-emitter breakdown voltage and a maximum collector current of 200mA. With a power dissipation rating of 200mW, it is suitable for low-power switching and amplification circuits. The device exhibits a minimum DC current gain (hFE) of 82 at 10mA collector current and 10V collector-emitter voltage. Its saturation voltage (Vce(sat)) is a maximum of 500mV at 2mA base current and 20mA collector current. The MMST4126T146 is supplied in a SMT3 package, equivalent to TO-236-3 or SC-59, and is available on tape and reel. Typical applications include amplification and switching in consumer electronics and industrial control systems. The operating temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 10mA, 10V |
| Supplier Device Package | SMT3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 200 mW |
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