BSS64T116
TRANS NPN 100V 0.1A SST3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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The Rohm Semiconductor BSS64T116 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of 100 mA. With a transition frequency of 140 MHz, it is suitable for various signal amplification and switching tasks. The device dissipates a maximum power of 350 mW and features a minimum DC current gain (hFE) of 30 at 25 mA and 1 V. The collector cutoff current (ICBO) is specified at a maximum of 100 nA. Packaged in an SST3 (TO-236-3, SC-59, SOT-23-3) footprint and supplied on tape and reel, the BSS64T116 operates within a temperature range of 150°C (TJ). This transistor is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 25mA, 1V |
| Frequency - Transition | 140MHz |
| Supplier Device Package | SST3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 350 mW |
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