2SD2705STP
TRANS NPN 20V 0.3A SPTManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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The Rohm Semiconductor 2SD2705STP is an NPN bipolar junction transistor designed for general-purpose switching and amplification applications. This component features a collector-emitter breakdown voltage of 20V and a continuous collector current capability of up to 300mA, with a maximum power dissipation of 300mW. The transistor exhibits a high DC current gain (hFE) of at least 820 at 4mA collector current and 2V collector-emitter voltage, and a transition frequency of 35MHz. Its low saturation voltage of 100mV at 3mA base current and 30mA collector current makes it suitable for low-power switching circuits. The 2SD2705STP is supplied in an SPT package, suitable for through-hole mounting, and available on tape and reel. This component finds application in various industrial and consumer electronics, including power management and signal conditioning circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 3mA, 30mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 820 @ 4ma, 2V |
| Frequency - Transition | 35MHz |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 300 mW |
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