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2SD2687STP

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2SD2687STP

TRANS GP BJT NPN 12V 5A 3-PIN SP

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

Quality Control: Learn More

Rohm Semiconductor NPN Bipolar Junction Transistor (BJT), part number 2SD2687STP. This through-hole device features a 12V collector-emitter breakdown voltage and a continuous collector current capability of 5A. With a maximum power dissipation of 400mW and an operating junction temperature up to 150°C, it is suitable for demanding electronic applications. Key electrical characteristics include a minimum DC current gain (hFE) of 180 at 2mA/6V, a collector cutoff current (ICBO) of 100nA, and a Vce(sat) of 500mV at 1mA/10mA. The transistor is supplied in a SPT package, compatible with Tape & Reel (TR) packaging for automated assembly. This component is commonly utilized in power management and switching circuits across various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-72 Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 2mA, 6V
Supplier Device PackageSPT
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)12 V
Power - Max400 mW

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