2SD2687STP
TRANS GP BJT NPN 12V 5A 3-PIN SPManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor (BJT), part number 2SD2687STP. This through-hole device features a 12V collector-emitter breakdown voltage and a continuous collector current capability of 5A. With a maximum power dissipation of 400mW and an operating junction temperature up to 150°C, it is suitable for demanding electronic applications. Key electrical characteristics include a minimum DC current gain (hFE) of 180 at 2mA/6V, a collector cutoff current (ICBO) of 100nA, and a Vce(sat) of 500mV at 1mA/10mA. The transistor is supplied in a SPT package, compatible with Tape & Reel (TR) packaging for automated assembly. This component is commonly utilized in power management and switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 6V |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 400 mW |
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