2SD2672TL
TRANS NPN 12V 4A TSMT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor (BJT), part number 2SD2672TL. This device features a collector current rating of 4A and a collector-emitter breakdown voltage of 12V. The transition frequency is 250MHz, with a maximum power dissipation of 500mW. Designed for surface mount applications, it is supplied in a TSMT3 (SC-96) package, presented on tape and reel (TR). The minimum DC current gain (hFE) is specified as 270 at 200mA and 2V. Collector cutoff current (ICBO) is a maximum of 100nA. Vce(sat) is 250mV at 40mA/2A. This component is utilized in various industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 40mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 200mA, 2V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | TSMT3 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 500 mW |