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2SD2672TL

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2SD2672TL

TRANS NPN 12V 4A TSMT3

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

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Rohm Semiconductor NPN Bipolar Junction Transistor (BJT), part number 2SD2672TL. This device features a collector current rating of 4A and a collector-emitter breakdown voltage of 12V. The transition frequency is 250MHz, with a maximum power dissipation of 500mW. Designed for surface mount applications, it is supplied in a TSMT3 (SC-96) package, presented on tape and reel (TR). The minimum DC current gain (hFE) is specified as 270 at 200mA and 2V. Collector cutoff current (ICBO) is a maximum of 100nA. Vce(sat) is 250mV at 40mA/2A. This component is utilized in various industrial and consumer electronics applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-96
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic250mV @ 40mA, 2A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce270 @ 200mA, 2V
Frequency - Transition250MHz
Supplier Device PackageTSMT3
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)12 V
Power - Max500 mW

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