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2SD2607FU6

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2SD2607FU6

TRANS NPN DARL 100V 8A TO220FN

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

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Rohm Semiconductor's 2SD2607FU6 is an NPN Darlington bipolar junction transistor. Featuring a 100 V collector-emitter breakdown voltage and capable of handling up to 8 A collector current, this component is designed for demanding applications. Its high DC current gain, specified at a minimum of 1000 at 2 A collector current and 3 V collector-emitter voltage, ensures efficient amplification. The transistor operates with a transition frequency of 40 MHz and a maximum power dissipation of 2 W. The device is housed in a TO-220FN package with a through-hole mounting type, allowing for robust thermal management. Typical applications include power switching and control circuits in industrial automation, consumer electronics, and automotive systems. The collector cutoff current is a maximum of 10 µA (ICBO), and the Vce saturation is a maximum of 1.5 V at 6 mA base current and 3 A collector current. This component is supplied in bulk packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 6mA, 3A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A, 3V
Frequency - Transition40MHz
Supplier Device PackageTO-220FN
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max2 W

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