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2SD2396K

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2SD2396K

TRANS NPN 60V 3A TO220FN

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

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Rohm Semiconductor NPN Bipolar Junction Transistor, part number 2SD2396K. This device offers a 60V collector-emitter breakdown voltage and a continuous collector current capability of 3A. With a transition frequency of 40MHz and a maximum power dissipation of 2W, it is suitable for applications requiring efficient current amplification. The minimum DC current gain (hFE) is specified at 1000 at 500mA collector current and 4V collector-emitter voltage. The transistor exhibits a Vce(sat) of 800mV at 50mA base current and 2A collector current. Operating temperature ranges up to 150°C. The component is supplied in a TO-220FN package. This transistor is commonly utilized in power supply circuits and general-purpose amplification within industrial and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic800mV @ 50mA, 2A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 500mA, 4V
Frequency - Transition40MHz
Supplier Device PackageTO-220FN
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max2 W

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