2SD2391T100Q
TRANS NPN 60V 2A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SD2391T100Q is a NPN bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of up to 2A. With a maximum power dissipation of 2W and a transition frequency reaching 210MHz, it is suitable for general-purpose amplification and switching in power management and consumer electronics. The device operates at junction temperatures up to 150°C and is supplied in a Tape & Reel (TR) package, specifically the MPT3 (TO-243AA) format. Key electrical characteristics include a minimum DC current gain (hFE) of 120 at 500mA and 2V, and a saturation voltage (Vce) of 350mV at 50mA and 1A. Collector cutoff current is rated at a maximum of 100nA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 2V |
| Frequency - Transition | 210MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 2 W |
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