2SD2212T100
TRANS NPN DARL 60V 2A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Darlington Transistor, part number 2SD2212T100, is a surface-mount bipolar junction transistor (BJT) designed for robust switching and amplification applications. This device features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 2A. With a DC current gain (hFE) of 1000 minimum at 1A and 2V, it exhibits significant amplification capability. The transition frequency is rated at 80MHz, and it can dissipate up to 2W of power. The specified Vce(sat) is 1.5V maximum at 1mA base current and 1A collector current. The transistor is housed in a MPT3 package, also known as TO-243AA, and is supplied on tape and reel. This component is commonly found in industrial automation, power management, and consumer electronics where reliable switching is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A, 2V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 2 W |