2SD2211T100R
TRANS NPN 160V 1.5A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
Quality Control: Learn More
Rohm Semiconductor NPN Bipolar Junction Transistor (BJT) 2SD2211T100R offers a 160V collector-emitter breakdown voltage and a 1.5A continuous collector current. This device features a transition frequency of 80MHz and a maximum power dissipation of 2W. With a minimum DC current gain (hFE) of 180 at 100mA and 5V, it provides robust amplification characteristics. The transistor operates at temperatures up to 150°C and is supplied in the MPT3 package, a TO-243AA form factor, suitable for surface mounting. This component is commonly utilized in power supply circuits, voltage regulators, and general-purpose amplification applications within industrial and consumer electronics sectors. The part is delivered in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 100mA, 5V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 2 W |