2SD2211T100Q
TRANS NPN 160V 1.5A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor, part number 2SD2211T100Q. This device features a 160 V collector-emitter breakdown voltage and a continuous collector current capability of 1.5 A. With a transition frequency of 80 MHz and a maximum power dissipation of 2 W, it is suitable for applications requiring moderate power handling and switching speeds. The DC current gain (hFE) is a minimum of 120 at 100mA collector current and 5V collector-emitter voltage. Operating temperature range extends to 150°C (TJ). The transistor is supplied in the MPT3 package, a TO-243AA variant, for surface mounting and is provided on tape and reel. This component finds application in general-purpose amplification and switching circuits within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 5V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 2 W |
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