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2SD2195T100

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2SD2195T100

TRANS NPN DARL 100V 2A MPT3

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

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Rohm Semiconductor NPN Darlington Transistor, part number 2SD2195T100. This surface mount device, packaged in an MPT3 (TO-243AA), offers a collector-emitter breakdown voltage of 100V and a continuous collector current capability of 2A. Featuring a minimum DC current gain (hFE) of 1000 at 1A and 2V, and a transition frequency of 80MHz, this transistor is suitable for applications requiring high current gain and moderate switching speeds. The maximum power dissipation is 2W, with an operating junction temperature up to 150°C. Saturation voltage is rated at 1.5V at 1mA/1A, and collector cutoff current is 10µA (ICBO). This component is commonly utilized in power switching, amplification circuits, and general-purpose electronics. Supplied on tape and reel (TR).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 1mA, 1A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 1A, 2V
Frequency - Transition80MHz
Supplier Device PackageMPT3
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max2 W

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