2SD2150T100S
TRANS NPN 20V 3A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor, part number 2SD2150T100S, is a high-performance component engineered for demanding applications. This transistor boasts a 20V collector-emitter breakdown voltage and a maximum collector current of 3A, making it suitable for power switching and amplification tasks. With a transition frequency of 290MHz and a minimum DC current gain (hFE) of 270 at 100mA and 2V, it offers excellent signal handling capabilities. The device is presented in a compact MPT3 surface-mount package (TO-243AA), supplied on tape and reel for efficient automated assembly. Its maximum power dissipation is rated at 500mW, with an operating junction temperature of up to 150°C. This component is frequently utilized in consumer electronics, industrial control systems, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 100mA, 2V |
| Frequency - Transition | 290MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 500 mW |