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2SD2150T100R

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2SD2150T100R

TRANS NPN 20V 3A MPT3

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

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Rohm Semiconductor NPN Bipolar Junction Transistor (BJT), part number 2SD2150T100R. This surface mount device, packaged in MPT3 (TO-243AA), offers a collector current capability of 3A and a collector-emitter breakdown voltage of 20V. Key parameters include a maximum power dissipation of 500mW, a transition frequency of 290MHz, and a minimum DC current gain (hFE) of 180 at 100mA and 2V. The saturation voltage (Vce(sat)) is a maximum of 500mV at 100mA and 2A. Operating temperature range extends to 150°C (TJ). This component is commonly utilized in industrial and consumer electronics applications requiring efficient current switching and amplification. Packaged in Tape & Reel (TR).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 2A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 100mA, 2V
Frequency - Transition290MHz
Supplier Device PackageMPT3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)20 V
Power - Max500 mW

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