2SD2150T100R
TRANS NPN 20V 3A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
Quality Control: Learn More
Rohm Semiconductor NPN Bipolar Junction Transistor (BJT), part number 2SD2150T100R. This surface mount device, packaged in MPT3 (TO-243AA), offers a collector current capability of 3A and a collector-emitter breakdown voltage of 20V. Key parameters include a maximum power dissipation of 500mW, a transition frequency of 290MHz, and a minimum DC current gain (hFE) of 180 at 100mA and 2V. The saturation voltage (Vce(sat)) is a maximum of 500mV at 100mA and 2A. Operating temperature range extends to 150°C (TJ). This component is commonly utilized in industrial and consumer electronics applications requiring efficient current switching and amplification. Packaged in Tape & Reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 100mA, 2V |
| Frequency - Transition | 290MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 500 mW |